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Local oxidation nanolithography : ウィキペディア英語版 | Local oxidation nanolithography
Local oxidation nanolithography (LON) is a tip-based nanofabrication method. It is based on the spatial confinement on an oxidation reaction under the sharp tip of an atomic force microscope. The first materials on which LON was demonstrated were Si(111) and polycrystalline tantalum. Subsequently, the technique has been extended to III–V semiconductors, silicon carbide, metals such as titanium, tantalum, aluminium, molybdenum, nickel and niobium; thin films of manganite in the perovskite form; dielectrics like silicon nitride, organosilane self-assembled monolayers, dendritic macromolecules and carbonaceous films. ==History== The local oxidation of a surface by means of a scanning probe technique was first observed by Dagata and co-workers in 1990 who locally modified a hydrogen-terminated silicon surface into silicon dioxide by applying a bias voltage between the tip of a scanning tunneling microscope and the surface itself. In 1993 Day and Allee demonstrated the possibility of performing local oxidation experiments with an atomic force microscope, which opened the way to applying the technique to a large variety of materials.
抄文引用元・出典: フリー百科事典『 ウィキペディア(Wikipedia)』 ■ウィキペディアで「Local oxidation nanolithography」の詳細全文を読む
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